Small footprint InGaSb/AlGaAsSb multiple-quantum-well light-emitting diodes

Mid-infrared light-emitting diodes with InGaSb/AlGaAsSb triple-quantum-well active region have been integrated into arrays of either 200×200 μm2 or 40×40 μm2 square pixels. Two generations of arrays have been designed, fabricated and tested. The first, "sparse" 6×6 array provided valuable information on optimal electrode design and fabrication parameters that was used in the design and processing of the second generation "dense" 11×11 array.

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