Ultra-Multilevel-Storage Phase Change Memory

In this study, we investigated ultra-multilevel-storage (UMLS) in lateral phase change memory (PCM) on the basis of device structure, reliability and programming method. We found that the number of resistance levels was limited strictly by the number of PC layers in multilayer multilevel cell (ML-MLC). A number of distinct levels up to 16 were obtained using a simple single-layer multilevel cell (SL-MLC). And material engineering is expected to greatly improve the reliability of MLS. We believe that fast-freely-achievable (FFA)-MLC by stair-like-pulse programming is a very promising method for futures application.

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