Quantum well intermixing in material systems for 1.5 μm (invited)

Precise control over local optical and electrical characteristics across a semiconductor wafer is a fundamental requirement for the fabrication of photonic integrated circuits. Quantum well intermixing is one approach, where the band gap of a quantum well structure is modified by intermixing the well and barrier layers. Here we report recent progress in the development of intermixing techniques for long wavelength applications, discussing two basic techniques. The first is a class of laser disordering techniques which take place in the solid state. The second is a novel intermixing technique involving plasma induced damage. Both techniques enable large band gap shifts to be achieved in standard GaInAsP multiple quantum well laser structures. The potential of both techniques for photonic integration is further demonstrated by the fabrication and characterisation of extended cavity lasers.

[1]  John H. Marsh,et al.  Quantum well intermixing with high spatial selectivity using a pulsed laser technique , 1995 .

[2]  A. C. Bryce,et al.  Fabrication of electroabsorption optical modulators using laser disordered GaInAs/GaInAsP multiquantum well structures , 1994 .

[3]  H. Iwamura,et al.  Integrated external-cavity InGaAs/InP lasers using cap-annealing disordering , 1991, IEEE Photonics Technology Letters.

[4]  R. E. Mallard,et al.  Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates , 1993 .

[5]  C. J. McLean,et al.  Lateral control of the bandgap in GaInAs/GaInAsP MQW structures using photoabsorption-induced disordering , 1993 .

[6]  N. Holonyak,et al.  Effects of dielectric encapsulation and As overpressure on Al‐Ga interdiffusion in AlxGa1−x As‐GaAs quantum‐well heterostructures , 1987 .

[7]  U. Koren,et al.  Phosphorus ion implantation induced intermixing of InGaAs‐InP quantum well structures , 1989 .

[8]  A. C. Bryce,et al.  Transmission electron microscopy study of fluorine and boron implanted and annealed GaAs/AlGaAs , 1994 .

[9]  Y. Uematsu,et al.  Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers , 1985, IEEE Journal of Quantum Electronics.

[10]  Karl Hess,et al.  Disorder of an AlAs‐GaAs superlattice by impurity diffusion , 1981 .

[11]  John H. Marsh,et al.  Impurity induced disordering of GaInAs quantum wells with barriers of AlGaInAs or of GaInAsP , 1991 .

[12]  John H. Marsh,et al.  Layer selective disordering by photoabsorption-induced thermal diffusion in InGaAs/InP based multiquantum well structures , 1992 .

[13]  A. Compaan,et al.  Pulsed laser annealing of GaAs implanted with Se and Si , 1990 .

[14]  T. Venkatesan,et al.  InGaAs/InP superlattice mixing induced by Zn or Si diffusion , 1988 .

[15]  John H. Marsh,et al.  High quality wavelength tuned multiquantum well GaInAs/GaInAsP lasers fabricated using photoabsorption induced disordering , 1994 .

[16]  M. Aoki,et al.  InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD , 1993 .

[17]  J. Epler,et al.  Layer disordering of GaAs‐AlGaAs superlattices by diffusion of laser‐incorporated Si , 1988 .

[18]  John H. Marsh,et al.  Monolithic integration in InGaAs-InGaAsP multiple-quantum-well structures using laser intermixing , 1997 .

[19]  Kam Y. Lau,et al.  Bistability and pulsations in semiconductor lasers with inhomogeneous current injection , 1982 .

[20]  F. A. Chambers,et al.  Intermixing of AlxGa1−xAs/GaAs superlattices by pulsed laser irradiation , 1987 .