Characterization of in-grown stacking faults in 4H–SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes

The density, shape and structure of in-grown stacking faults in 4H–SiC (0001) epitaxial layers have been characterized by cathodeluminescence, photoluminescence and high-resolution transmission electron microscopy. These analyses indicate that in-grown stacking faults are of 8H structure, and are generated mostly near the epilayer/substrate interface during chemical vapor deposition. The impact of the stacking faults on the performance of 4H–SiC (0001) Schottky barrier diodes has been investigated. It is revealed that the stacking faults cause the lowering of Schottky barrier height as well as the decrease of breakdown voltage.

[1]  H. Tsuchida,et al.  Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial Layers , 2005 .

[2]  Tadashi Ito,et al.  Ultrahigh-quality silicon carbide single crystals , 2004, Nature.

[3]  H. Matsunami,et al.  Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature , 2004 .

[4]  H. Lendenmann,et al.  Properties and origins of different stacking faults that cause degradation in SiC PiN diodes , 2004 .

[5]  Tsunenobu Kimoto,et al.  Crystallographic defects under device-killing surface faults in a homoepitaxially grown film of SiC , 2003 .

[6]  T. Hatakeyama,et al.  Optimum Design of a SiC Schottky Barrier Diode Considering Reverse Leakage Current due to a Tunneling Process , 2003 .

[7]  H. Matsunami,et al.  Growth and characterization of 4H–SiC in vertical hot-wall chemical vapor deposition , 2003 .

[8]  H. Tsuchida,et al.  Influence of 4H–SiC Growth Conditions on Micropipe Dissociation , 2002 .

[9]  K. Kojima,et al.  Influence of stacking faults on the performance of 4H–SiC Schottky barrier diodes fabricated on (112̄0) face , 2002 .

[10]  W. J. Choyke,et al.  Spectra Associated with Stacking Faults in 4H-SiC Grown in a Hot-Wall CVD Reactor , 2002 .

[11]  J. Cooper,et al.  Impact of Material Defects on SiC Schottky Barrier Diodes , 2002 .

[12]  H. Tsuchida,et al.  Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements , 2002 .

[13]  M. Skowronski,et al.  Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions , 2002 .

[14]  J. Bergman,et al.  Luminescence from stacking faults in 4H SiC , 2001 .

[15]  A. Ellison,et al.  Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes , 2000 .

[16]  Michael Dudley,et al.  Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (<250 V) 4H-SiC p/sup +/-n junction diodes. I. DC properties , 1999 .

[17]  O. Noblanc,et al.  Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers , 1999 .

[18]  Tsunenobu Kimoto,et al.  Performance limiting surface defects in SiC epitaxial p-n junction diodes , 1999 .

[19]  P. Neudeck,et al.  Performance limiting micropipe defects in silicon carbide wafers , 1994, IEEE Electron Device Letters.

[20]  W. J. Choyke,et al.  Controlled growth of 3C‐SiC and 6H‐SiC films on low‐tilt‐angle vicinal (0001) 6H‐SiC wafers , 1991 .

[21]  W. J. Choyke,et al.  Silicon carbide : recent major advances , 2004 .