Formation of High-Quality GaN Microcrystals by Pendeoepitaxial Overgrowth of GaN Nanowires on Si(111) by Molecular Beam Epitaxy

Hexagonal GaN microcrystals of a size between 1 to 3 μm are obtained by the pendeoepitaxial overgrowth of a GaN nanowire template on Si(111). The GaN microcrystals are free of threading dislocation...

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