A BICMOS 120 MW 11 GHZ transimpedance amplifier Dedicated for High-Speed Photoreceivers

We present a new low-noise, low-power SiGe transimpedance amplifier (TIA) by combining an automatic DC photo-current cancellation, an on-chip DC offset compensation circuit and a single-ended to differential conversion scheme. The conversion method is based of the replica biasing technique in order to provide balanced output signals to the subsequent stages. The chip was fabricated in a 0.18 μm SiGe BiCMOS technology. Experimental results show excellent performances such as 11 GHz bandwidth, 75-dBΩ transimpedance, -19.2 dBm sensitivity measured at 10 Gb/s at a Bit Error Rate (BER) of 10-12, input referred noise, and 9.5 ps peak-to-peak jitter which are the best overall performances reported in its category. The photoreceiver chip is expected to dissipate only 120 mW from a single 3.3 V power supply.

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