FET statistical modeling using parameter orthogonalization

A new method for representing the statistical variation of FET equivalent circuit parameters (ECPs) is presented. This method utilizes a statistical technique known as principal components and provides an efficient method for statistically representing the means, standard deviations, and correlations of the FET ECPs. The technique can easily be implemented into commercial CAD simulators resulting in FET variation simulations that are more accurate than existing methods. Appropriate statistical tests for determination of equivalence between simulated and measured FET parameter distributions is also discussed. Both the modeling methodology and statistical testing were demonstrated using both scattering and noise parameters for 300 /spl mu/m low-noise GaAs FETs.

[1]  Vincent Fusco,et al.  A systematic optimization strategy for microwave device modelling , 1993 .

[2]  J. Purviance,et al.  FET model statistics and their effects on design centering and yield prediction for microwave amplifiers , 1988, 1988., IEEE MTT-S International Microwave Symposium Digest.

[3]  P. K. Ikalainen.  Extraction of device noise sources from measured data using circuit simulator software , 1993 .

[4]  Norman R. Draper,et al.  Applied regression analysis (2. ed.) , 1981, Wiley series in probability and mathematical statistics.

[5]  John E. Purviance,et al.  Yield and Reliability in Microwave Circuit and System Design , 1993 .

[6]  J. Purviance,et al.  Statistical interpolation of FET data base measurements , 1991, 1991 IEEE MTT-S International Microwave Symposium Digest.

[7]  J. E. Purviance,et al.  A linear statistical FET model using principal component analysis , 1989 .

[8]  Joseph A. Wolkan.  Introduction to Probability and Statistics (2nd ed.) , 1992 .

[9]  M. D. Meehan,et al.  Statistical techniques for objective characterization of microwave device statistical data , 1991, 1991 IEEE MTT-S International Microwave Symposium Digest.

[10]  L. Devroye.  Non-Uniform Random Variate Generation , 1986 .

[11]  Joseph A. Wolkan,et al.  Introduction to probability and statistics , 1994 .

[12]  N. Draper,et al.  Applied Regression Analysis , 1966 .

[13]  J. Purviance,et al.  Properties of FET parameter statistical data bases , 1990, IEEE International Digest on Microwave Symposium.

[14]  R. Anholt,et al.  Statistical analysis of GaAs MESFET S-parameter equivalent-circuit models , 1991 .

[15]  David A. Fisher,et al.  Accurate design centering and yield prediction using the 'truth model' (FET model and MMIC design) , 1991, 1991 IEEE MTT-S International Microwave Symposium Digest.

[16]  Q.J. Zhang,et al.  Combined Discrete/Normal Statistical Modeling of Microwave Devices , 1989, 1989 19th European Microwave Conference.