A 30 GHz FET-Oscillator using Fin-Line Circuitry

The rapid progress in the semiconductor field has rendered possible the utilization of GaAs Field Effect Transistors for oscillator applications in the mm-wave range. Recently quasi planar line structures, like fin-line, have been investigated. Based on this know-how, a 30 GHz fin-line FET-Oscillator has been developed. 3 mW of output power were achieved with a corresponding DC-RF efficiency of nearly 4 %.