Hybrid-integrated GaAs/GaAs and InP/GaAs semiconductors through wafer bonding technology: Interface adhesion and mechanical strength

In this study, the interface adhesion and mechanical strength of wafer bonded GaAs/GaAs and GaAs/InP semiconductors, each of (100) face, were characterized by combining the measurements of interface fracture energy γo and lap shear strength Es. The relations between the interface adhesion and annealing processes for four different types of bonding configurations, i.e., antiphase bonding, in-phase bonding, and twist bonding with 5° and 30° misalignments, were systematically studied. The surface free energy γα-GaAs/oxide (0.11–0.28 J/m2) of amorphous α-GaAs/oxide mixture was estimated based upon the reported surface free energy γc-GaAs (0.63 J/m2) of crystalline [100] GaAs and measured overall interface fracture energy γtotal (0.525 J/m2) of GaAs/GaAs bonded wafers. The micromorphologies of the bonded and debonded wafer interfaces were characterized by atomic force microscopy (AFM) and transmission electron microcopy (TEM). The interface microfailure mechanism of directly bonded GaAs wafers was proposed bas...

[1]  S. Jain,et al.  Misfit strain and misfit dislocations in lattice mismatched epitaxial layers and other systems , 1997 .

[2]  H. Sasaki,et al.  Wafer bonding technology for optoelectronic integrated devices , 1999 .

[3]  Wafer-fused p-i-n InGaAs/Si photodiode with photogain , 2001 .

[4]  D. W. Treat,et al.  Wafer fusion of infrared laser diodes to GaN light-emitting heterostructures , 1998, IEEE Photonics Technology Letters.

[5]  Roland Scholz,et al.  “Compliant” twist-bonded GaAs substrates: The potential role of pinholes , 1999 .

[6]  Andreas Dr. Plößl,et al.  GaAs wafer bonding by atomic hydrogen surface cleaning , 1999 .

[7]  U. Gösele,et al.  Wafer bonding of different III–V compound semiconductors by atomic hydrogen surface cleaning , 2001 .

[8]  J. Bowers,et al.  Wafer fusion: materials issues and device results , 1997 .

[9]  U. Gösele,et al.  A model of strain relaxation in hetero-epitaxial films on compliant substrates , 1998 .

[10]  F. A. Kish,et al.  Low‐resistance Ohmic conduction across compound semiconductor wafer‐bonded interfaces , 1995 .

[11]  Felix Ejeckam,et al.  Wafer bonding technology and its applications in optoelectronic devices and materials , 1997 .

[12]  U. Gösele,et al.  Large-area wafer bonding of GaAs using hydrogen and ultrahigh vacuum atmospheres , 2000 .

[13]  R. Dauskardt,et al.  Adhesion and reliability of copper interconnects with Ta and TaN barrier layers , 2000 .

[14]  A. Plößl.  Wafer direct bonding: tailoring adhesion between brittle materials , 1999 .

[15]  John E. Bowers,et al.  Interface of directly bonded GaAs and InP , 2001 .

[16]  Huajian Gao,et al.  Plasticity contributions to interface adhesion in thin-film interconnect structures , 2000 .

[17]  Mattias Hammar,et al.  Defects, structure, and chemistry of InP-GaAs interfaces obtained by wafer bonding , 2000 .

[18]  Felix Ejeckam,et al.  Lattice engineered compliant substrate for defect-free heteroepitaxial growth , 1997 .

[19]  Lee,et al.  GaAs(001) surface under conditions of low As pressure: evidence for a novel surface geometry , 2000, Physical review letters.

[20]  K. Cheng,et al.  Characterization of GaAs-based n-n and p-n interface junctions prepared by direct wafer bonding , 2002 .

[21]  K. Uomi,et al.  Direct wafer bonding of III-V compound semiconductors for free-material and free-orientation integration , 1997 .

[22]  Thin-film wafer fusion for buried-heterostructure InP-based lasers fabricated on a GaAs substrate , 2000 .