Extended Arrhenius law of time-to-breakdown of ultrathin gate oxides

A stress-induced double-donor conductivity model is proposed to investigate the temperature dependence of time-to-breakdown in ultrathin gate oxides. The permittivity-to-breakdown is defined as the product of conductivity and time-to-breakdown. The breakdown of oxides occurs when the permittivity-to-breakdown reaches a critical value. This model shows that the overall temperature dependence of time-to-breakdown can be described in terms of the extended Arrhenius law. In this case, there exist three temperature regions with different activation energies, where Arrhenius behavior still holds in each region.

[1]  J. R. Gliessman,et al.  The Resistivity and Hall Effect of Germanium at Low Temperatures , 1950 .

[2]  Esther M. Conwell,et al.  Impurity Band Conduction in Germanium and Silicon , 1956 .

[3]  Nevill Mott,et al.  The theory of impurity conduction , 1961 .

[4]  R. Gurney,et al.  Electronic Processes in Ionic Crystals , 1964 .

[5]  R. J. Bell,et al.  The structure of vitreous silica: Validity of the random network theory , 1972 .

[6]  S. Pantelides,et al.  Electronic structure, spectra, and properties of 4:2-coordinated materials. I. Crystalline and amorphousSiO2andGeO2 , 1976 .

[7]  R. C. Hughes High field electronic properties of SiO2 , 1978 .

[8]  Walter A. Harrison,et al.  Electronic structure and the properties of solids , 1980 .

[9]  F. L. Galeener,et al.  Planar rings in vitreous silica , 1982 .

[10]  R. A. Barrio,et al.  Vibrational decoupling of rings in amorphous solids , 1984 .

[11]  Chiou-Feng Chen,et al.  The dielectric reliability of intrinsic thin SiO 2 films thermally grown on a heavily doped Si substrate—characterization and modeling , 1987 .

[12]  Shinichi Takagi,et al.  Correlation between two dielectric breakdown mechanisms in ultra‐thin gate oxides , 1996 .

[13]  J. W. McPherson,et al.  Field-enhanced Si–Si bond-breakage mechanism for time-dependent dielectric breakdown in thin-film SiO2 dielectrics , 1997 .

[14]  E. Cartier,et al.  Characterization of the hot-electron-induced degradation in thin SiO2 gate oxides , 1998 .

[15]  Koji Eriguchi,et al.  Temperature and stress polarity-dependent dielectric breakdown in ultrathin gate oxides , 1998 .

[16]  K. Olasupo,et al.  Field and temperature dependence of TDDB of ultrathin gate oxide , 1999, IEEE Electron Device Letters.

[17]  J. Stathis,et al.  Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films , 1999 .

[18]  R. Degraeve,et al.  Photo-carrier generation as the origin of Fowler-Nordheim-induced substrate hole current in thin oxides , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

[19]  The double level calculation of oxygen related donor states in Si and SiO2 , 2001 .