Using metrology capabilities of mask inspection equipment for optimizing total lithography performance
暂无分享,去创建一个
[1] Yoshitake Tsuji,et al. Development of next-generation mask inspection method by using the feature of mask image captured with 199-nm inspection optics , 2006, SPIE Photomask Technology.
[2] Osamu Suga,et al. Development of advanced reticle inspection apparatus for hp 65 nm node device and beyond , 2006, Photomask Japan.
[3] Carl Hess,et al. Reticle inspection-based critical dimension uniformity , 2009, Photomask Japan.
[4] Sang-Gyun Woo,et al. IntenCD: an application for CD uniformity mapping of photomask and process control at maskshops , 2008, Photomask Japan.
[5] Yoshitake Tsuji,et al. Development of advanced mask inspection optics with transmitted and reflected light image acquisition , 2007, SPIE Advanced Lithography.
[6] Takashi Kamikubo,et al. Modeling of charging effect and its correction by EB mask writer EBM-6000 , 2008, Photomask Japan.
[7] Shmoolik Mangan,et al. IntenCD: mask critical dimension variation mapping , 2008, Photomask Japan.
[8] Fumiaki Shigemitsu. Smart way to determine and guarantee mask specifications: tradeoff between cost and quality , 2009, Photomask Japan.