论文信息 - Mechanisms of charge modulation in the floating body of triple-well nMOSFET capacitor-less DRAMs

Mechanisms of charge modulation in the floating body of triple-well nMOSFET capacitor-less DRAMs

We report on the modeling and characterization of the memory effect observed on triple-well nMOSFETs. First, the mechanisms of charge injection, localization and retention in the floating p-well of triple-well nMOSFETs are investigated and a new model is proposed. Then several electrical characterization set-ups are discussed. Finally, modeled and measured data are compared at room temperature.

[1] C. Claeys,et al. The multistable charge-controlled memory effect in SOI MOS transistors at low temperatures , 1990 .

[2] S. Okhonin,et al. A capacitor-less 1T-DRAM cell , 2002, IEEE Electron Device Letters.

[3] S. M. Sze,et al. Physics of semiconductor devices , 1969 .