论文信息 - Development of Si-HM for NTD process

Development of Si-HM for NTD process

Negative Tone Development (NTD) process with ArF immersion has been developed for the next generation lithography technology because it shows good resolution performance and process window for C/H and trench patterning. Because of the etch requirement, tri-layer process has been used popularly. However, most of the Si-HM materials are optimized for positive tone development process and most of them show poor lithography performance in NTD process. In this paper, we study the behaviors of Si-HM for NTD process, develop new concepts and optimize the formulation of Si-HM to match the resist for NTD process bellow N28 node device.

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[3] Shinji Tarutani,et al. Development of materials and processes for negative tone development toward 32-nm node 193-nm immersion double-patterning process , 2009, Advanced Lithography.