ICs for 100 Gbit/s Data Transmission

Research and development of InP-based transistors and integrated circuits (ICs) are driven by applications in millimeter-wave wireless and broadband optical fiber communications systems. This paper describes our research activities on InP HEMT and HBT IC technologies for optical communications systems and discusses the future prospects and technical issues of ICs for 100 Gbit/s and beyond.

[1]  T. Suzuki,et al.  A 100-Gbit/s 2:1 multiplexer in InP HEMT technology , 2003, IEEE MTT-S International Microwave Symposium Digest, 2003.

[2]  K. Joshin,et al.  A 100-GHz distributed amplifier in chip-size package , 2003, IEEE MTT-S International Microwave Symposium Digest, 2003.

[3]  Y. Baeyens,et al.  A monolithic integrated 150 GHz SiGe HBT push-push VCO with simultaneous differential V-band output , 2003, IEEE MTT-S International Microwave Symposium Digest, 2003.

[4]  Bias acceleration model of drain resistance degradation in InP-based HEMTs , 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

[5]  K. Murata,et al.  100-Gbit/s logic IC using 0.1-/spl mu/m-gate-length InAlAs/InGaAs/InP HEMTs , 2002, Digest. International Electron Devices Meeting,.

[6]  M. Mokhtari,et al.  100+ GHz static divide-by-2 circuit in InP-DHBT technology , 2002, 24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu.

[7]  E. Sano,et al.  90 GHz operation of a novel dynamic frequency divider using InP/InGaAs HBTs , 2002, Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307).

[8]  T. Enoki InP-based HEMT technologies toward 100 Gbit/s ICs , 2002, Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307).

[9]  Koichi Murata,et al.  Very-high-speed selector IC using InP/InGaAs heterojunction bipolar transistors , 2002 .

[10]  K. Sano,et al.  Ultra-high-speed IC and OEIC technologies beyond 40 Gbit/s , 2002, 2002 28TH European Conference on Optical Communication.

[11]  M. Urteaga,et al.  50-200 GHz InP HBT Integrated Circuits for Optical Fiber and mm-Wave Communications , 2002, 2002 28TH European Conference on Optical Communication.

[12]  M. Ida,et al.  InP/InGaAs DHBTs with 341-GHz f/sub T/ at high current density of over 800 kA/cm/sup 2/ , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

[13]  Eiichi Sano,et al.  Prospects of InP-based IC technologies for 100-GBIT/S -class lightwave communications systems , 2001 .

[14]  Shoji Yamahata,et al.  Undoped-emitter InP/InGaAs HBTs for high-speed and low-power applications , 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

[15]  R. F. Kopf,et al.  Compact InP-based HBT VCOs with a wide tuning range at W- and D-band , 2000 .

[16]  N. Shimizu,et al.  A 40-Gbit/s monolithic digital OEIC module composed of uni-traveling-carrier photodiode and InP HEMT decision circuit , 2000, 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017).

[17]  Eiichi Sano,et al.  Reliable Carbon-Doped InP/InGaAs HBTs Technology for Low-Power 40-GHz Static Frequency Divider , 1999 .

[18]  Kimikazu Sano,et al.  20-40-Gbit/s-CLASS GaAs MESFET DIGITAL ICs FOR FUTURE OPTICAL FIBER COMMUNICATIONS SYSTEMS , 1998 .

[19]  T. Otsuji,et al.  Ultrahigh-Speed Integrated Circuits Using InP-Based HEMTs , 1998 .

[20]  Y. Imai,et al.  Loss-compensated distributed baseband amplifier IC's for optical transmission systems , 1996 .

[21]  Eiichi Sano,et al.  Device Figure-of-Merits for High-Speed Digital ICs and Baseband Amplifiers , 1995 .