Reliability evaluation of a 0.25 μm SiGe technology for space applications
暂无分享,去创建一个
M. Krstic | Dominique Langrez | Jean-Luc Muraro | J. L. Roux | Stéphane Rochette | C. Robin | S. Desgrez
[1] G. G. Fischer,et al. Ageing and thermal recovery of advanced SiGe heterojunction bipolar transistors under long-term mixed-mode and reverse stress conditions , 2015, Microelectron. Reliab..
[2] D. Micusik,et al. Long-term reliability of high-performance SiGe:C heterojunction bipolar transistors , 2012, 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
[3] J. Cressler,et al. A new "mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors , 2002 .
[4] B. Senapati,et al. A flexible, low-cost, high performance SiGe:C BiCMOS process with a one-mask HBT module , 2002, Digest. International Electron Devices Meeting,.