论文信息 - Oxygen vacancy engineering of TaO x -based resistive memories by Zr doping for improved variability and synaptic behavior - 字舞流文

Oxygen vacancy engineering of TaO x -based resistive memories by Zr doping for improved variability and synaptic behavior

D. Drouin | A. Ferlauto | F. Alibart | F. C. Fonseca | Y. Beilliard | E. Bonturim | D. Z. de Florio | João H Quintino Palhares