A 110–140 GHz Millimeter-Wave VCO Using Varactor and Bulk Effective Technique in 65 nm CMOS Process

In this paper, an enhanced voltage controlled oscillator (VCO) at center frequency 125 GHz with tuning rang of 24% is presented. The proposed idea is based on the tuning capacitance using MOS varactor. The structure is consisted of applying an MOS varactor capacitor to the drain and bulk (in parallel) of NMOS transistor in 65 nm CMOS standard technology. The obtained output of the proposed VCO at 2nd harmonic is tunable at 110–140 GHz frequency with applying ± 1.2 input tuning voltage. Simulation results of the proposed circuit are obtained after extracting post layout (with total chip size of 0.07 mm 2 ) and confirm theoretical results. Compared to the resent designs, the obtained results indicate that the proposed circuit has high tuning range, low die area and a good figure of merit @ 1.2 power supply voltage.

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