论文信息 - Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications - 字舞流文

Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications

R. Fallica | M. Longo | C. Wiemer | M. Fanciulli | S. Rushworth | P. Baumann | M. Heuken | O. Salicio | A. Molle | B. Seitzinger | C. Giesen