A dual-band (13/22-GHz) VCO based on resonant mode switching

A dual band voltage-controlled oscillator (VCO) that can cover 13- and 22-GHz bands is proposed and implemented using an InGaP/GaAs heterojunction bipolar transistor (HBT) technology. The frequency band is selected by mode switching between differential mode at low frequency and common mode at high frequency. The differential mode means that voltages appearing at two tank ports have opposite polarities and the common mode, the same polarities. Mode switching allows the VCO to operate at two resonant frequencies with a single LC tank. The measured phase-noise performances of a dual band VCO are -108 and -106 dBc/Hz at 1 MHz offset at the frequencies of 13 and 22 GHz, respectively, while drawing 22 mA and 16 mA from a 4-V supply. Switching times between two bands are less than 24 ns.

[1]  Tsuneo Tsukahara,et al.  A low-voltage 6-GHz-band CMOS monolithic LC-tank VCO using a tuning-range switching technique , 2000, 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017).

[2]  Hyunchol Shin,et al.  A 1.8-V 6/9-GHz switchable dual-band quadrature LC VCO in SiGe BiCMOS technology , 2002, 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280).

[3]  R.L. Miller Fractional-Frequency Generators Utilizing Regenerative Modulation , 1939, Proceedings of the IRE.

[4]  Xudong Wang,et al.  A fully integrated GSM/DCS/PCS Rx VCO with fast switching auto-band selection , 2002, Proceedings RAWCON 2002. 2002 IEEE Radio and Wireless Conference (Cat. No.02EX573).

[5]  Songcheol Hong,et al.  A Ku band InGaP/GaAs HBT MMIC VCO with a balanced and a differential topologies , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).