The band-gap bowing of AlxGa1−xN alloys

The band gap of AlxGa1−xN is measured for the composition range 0⩽x 800 °C usually lead to stronger apparent bowing (b>+1.3 eV); while growths initiated using low-temperature buffers on sapphire, followed by high-temperature growth, lead to weaker bowing (b<+1.3 eV). Extant data suggest that the intrinsic band-gap bowing parameter for AlGaN alloys is b=+0.62(±0.45) eV.

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