论文信息 - Influence of implantation temperature and surface protection on tellurium implantation in GaAs

Influence of implantation temperature and surface protection on tellurium implantation in GaAs

GaAs samples were implanted with tellurium at room temperature or at 150 °C and annealed to 750 °C with an SiO2 or Si3N4 protective layer. The highest electron concentrations and brightest photoluminescence were obtained for the hot implants with a Si3N4 protective layer.

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