Detection and Localization of Defects in Monocrystalline Silicon Solar Cell

Near-surface defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse-bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250 nm using near-field nondestructive characterization techniques. The results of mapped topography, local surface reflection, and local light to electric energy conversion measurement in areas with small defects strongly support the development and further evaluation of the technique.

[1]  D. Ginger,et al.  Mapping local photocurrents in polymer/fullerene solar cells with photoconductive atomic force microscopy. , 2007, Nano letters.

[2]  R. Haitz,et al.  Model for the Electrical Behavior of a Microplasma , 1964 .

[3]  Stefan Rein,et al.  Lifetime Spectroscopy : A Method of Defect Characterization in Silicon for Photovoltaic Applications , 2005 .

[4]  Pavel Tománek,et al.  Local optical and electric characteristics of solar cells , 2009, International Conference on Correlation Optics.

[5]  C. Donolato.  Theory of beam induced current characterization of grain boundaries in polycrystalline solar cells , 1983 .

[6]  Confocal optical beam induced current microscopy of light-emitting diodes with a white-light supercontinuum source , 2007 .

[7]  L. Kronik,et al.  Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineering , 2001 .

[8]  D. Schroder.  Semiconductor Material and Device Characterization , 1990 .

[9]  Jiri Vanek,et al.  Solar Cells Noise Diagnostic and LBIC Comparison , 2007 .

[10]  Pavel Tománek,et al.  Nanooptics of locally induced photocurrent in monocrystalline Si solar cells , 2008, Photonics Prague.

[11]  Pavel Tománek,et al.  Hybrid STM/R-SNOM with novel probe , 1998 .

[12]  Pavel Tomanek,et al.  Local measurement of optically induced photocurrent in semiconductor structures , 2003, Photonics Prague.

[13]  B. Goldberg,et al.  NEAR-FIELD OPTICAL BEAM INDUCED CURRENT MEASUREMENTS ON HETEROSTRUCTURES , 1995 .

[14]  C. S. Fuller,et al.  A New Silicon p‐n Junction Photocell for Converting Solar Radiation into Electrical Power , 1954 .

[15]  J. Nelson.  The physics of solar cells , 2003 .

[16]  P. Škarvada,et al.  Local light to electric energy conversion measurement of silicon solar cells , 2008, 2008 31st International Spring Seminar on Electronics Technology.

[17]  Paul A. Basore,et al.  Microwave-detected photoconductance decay , 1990, IEEE Conference on Photovoltaic Specialists.