论文信息 - Shallow p-type ohmic contact to Ga/sub 0.47/In/sub 0.53/As using Au/Ti/Mn/W

Shallow p-type ohmic contact to Ga/sub 0.47/In/sub 0.53/As using Au/Ti/Mn/W

The specific contact resistances of annealed Au/Ti/W contacts on 0.2 and 2*10/sup 19/ cm/sup -3/ Be doped GaInAs are found to decrease by factors of approximately 1000 and approximately 3, respectively, when a thin Mn layer is inserted between Ti and W, reaching 2.7*10/sup -6/ Omega cm/sup 2/ in the latter case. This type of shallow and thermally stable p-type ohmic contact avoids the problems associated with very high Be, or Zn doping and should be well suited for applications in high performance devices on InP substrate. >

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