Continuous 300-K laser operation of strained superlattices

Continuous (cw) 300‐K laser operation of a 66‐period lower energy GaAs‐InxGa1−xAs (x∼0.2) strained superlattice (SL) and a higher energy 128‐period GaAs1−xPx‐GaAs (x∼0.25) strained SL is demonstrated. The strained SL’s are grown by organometallic vapor phase epitaxy (OMVPE) or metalorganic chemical vapor deposition (MOCVD) with higher gap quaternary confining layers and LB ∼75 A barriers and Lz ∼75 A quantum wells. These SL’s are unstable during high level excitation, failing in 2–20 min when operated cw at 300 K as photopumped lasers.