论文信息 - ENERGY DISTRIBUTION OF ELECTRON TRAPPING DEFECTS IN THICK-OXIDE MNOS STRUCTURES

ENERGY DISTRIBUTION OF ELECTRON TRAPPING DEFECTS IN THICK-OXIDE MNOS STRUCTURES

ABSTRACT The energy distribution of electrons trapped during internal photoemission in the Si 3 N 4 layer of the thick-oxide A1-Si 3 N 4 -SiO 2 -Si structure has been investigated. Five well-defined electron trap levels were determined to be located at 2.50, 2.76, 3.03, 3.36 and 3.76 eV below the Si 3 N 4 conduction band edge at room temperature. The data suggests an association of the trapped charge with oxygen impurity in the Si 3 N 4 layer.

S. B. Bibyk | V. J. Kapoor | S. Bibyk | V. Kapoor

[1] S. T. Picraux,et al. Analyses for stoichiometry and for Hydrogen and Oxygen in silicon nitride films , 1978, IEEE Transactions on Electron Devices.

[2] S. R. Butler,et al. Energy and spatial distribution of an electron trapping center in the MOS insulator , 1977 .

[3] B. Yun. Electron and hole transport in CVD Si3N4 films , 1975 .

[4] J. H. Thomas,et al. Electron trapping levels in silicon dioxide thermally grown on silicon , 1972 .

[5] C. T. Kirk. Valence alternation pair model of charge storage in MNOS memory devices , 1979 .

[6] Richard Williams,et al. Photoemission of Electrons from Silicon into Silicon Dioxide , 1965 .