Conduction mechanisms, dynamics and stability in ReRAMs

Abstract Though resistive random access memory (ReRAM), a promising emerging memory technology, has achieved remarkable progress in technology development in recent years, our understanding of its conduction mechanisms, dynamic processes and stability issues is still limited. Because of this, this paper reviews recent research on the understanding of carrier transport, dynamics of conductive filament (CF) and failure mechanisms of stability issues. Critical challenges are summarized to clarify various intrinsic and non-intrinsic characteristics of ReRAM. The details of ion transport and redox dynamics of resistive switching are reviewed. Failure mechanisms of stability issues are discussed, including the tail bits degradation (relaxation effect). Random Telegraph Noise (RTN) studies are also reviewed as a reflection of oxygen vacancy movements to understand other stability issues.

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