论文信息 - Al2O3 with Metal-Nitride nanocrystals as a charge trapping layer of MONOS-type nonvolatile memory devices - 字舞流文

Al2O3 with Metal-Nitride nanocrystals as a charge trapping layer of MONOS-type nonvolatile memory devices

H. Hwang | S. Jeon | Seonghyun Kim | Dong‐Yu Kim | Sangmoo Choi | Hyun-Deok Yang | Chungwoo Kim | M. Chang