Room‐temperature laser operation of quantum‐well Ga(1−x)AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition

The achievement of room‐temperature (300 °K) operation of Ga(1−x)AlxAs‐GaAs double‐heterostructure lasers with active layers of quantum‐well dimensions ∼200 A thick is reported. These devices are grown by metalorganic chemical vapor deposition and exhibit pronounced effects in the spectral and lasing characteristics that are related to the small active region thickness and are the first such effects observed for DH lasers in the GaAlAs‐GaAs system.

[1]  W. Wiegmann,et al.  Laser oscillation from quantum states in very thin GaAs−Al0.2Ga0.8As multilayer structures , 1975 .

[2]  B. Pamplin.  Festkörperprobleme XV (Advances in solid state physics): by H.J. Queisser, 426 pages, illustr., 6x812 in. Pergamon Press/Vieweg, Oxford, 1975. Price, $45.00 (approx. £20·00). , 1976 .

[3]  L. Dawson.  High‐efficiency graded‐band‐gap Ga1−xAlxAs light‐emitting diodes , 1977 .

[4]  P. Dapkus,et al.  High-efficiency GaAlAs/GaAs heterostructure solar cells grown by metalorganic chemical vapor deposition , 1977 .

[5]  P. D. Dapkus,et al.  Room‐temperature operation of Ga(1−x)AlxAs/GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition , 1977 .

[6]  R. Dingle,et al.  Laser oscillation with optically pumped very thin GaAs‐AlxGa1−xAs multilayer structures and conventional double heterostructures , 1976 .

[7]  L. Esaki,et al.  Ga1−x Alx As superlattices profiled by Auger electron spectroscopy , 1974 .

[8]  G. E. Stillman,et al.  LPE In1−xGaxP1−zAsz (x∼0.12, z∼0.26) DH laser with multiple thin‐layer (<500 Å) active region , 1977 .

[9]  Hisashi Shichijo,et al.  Confined‐carrier luminescence of a thin In1−xGaxP1−zAsz well (x∼0.13, z∼0.29, ∼400 Å) in an InP p‐n junction , 1977 .

[10]  N. Holonyak,et al.  Single and multiple thin‐layer (Lz≲400 A) In1−xGaxP1−zAsz‐InP heterostructure light emitters and lasers (λ∼1.1 μm, 77 °K) , 1978 .

[11]  P. D. Dapkus,et al.  Ga(1−x)AlxAs/Ga(1−y)AlyAs double‐heterostructure room‐temperature lasers grown by metalorganic chemical vapor deposition , 1977 .