Structural parameters and polarization properties of TiN thin films prepared by reactive magnetron sputtering

We report the results of the investigation of morphological, structural, optical and plarimeteric properties of titanium nitride thin films deposited on silicon and glass substrates. The magnetron sputtered titanium nitride thin films were established to possess crystalline structure with the average grain size about D = 15 nm. The method of correlation matrix is was applied for the analysis of polarization properties of scattered light by the titanium nitride thin film. The obtained experimental result, can be explained by the presence of the effects of linear and circular dichroism in the material of the titanium nitride thin films under investigations.

[1]  V. V. Brus,et al.  Isotype surface-barrier n-TiN/n-Si heterostructure , 2014 .

[2]  V. V. Brus,et al.  On the impedance spectroscopy of structures with a potential barrier , 2012 .

[3]  V. V. Brus,et al.  Electrical and optical properties of TiN thin films , 2013, Inorganic Materials.

[4]  A. G. Ushenko,et al.  Polarization correlometry of angular structure in the microrelief pattern of rough surfaces , 2002 .

[5]  Igor M. Fodchuk,et al.  Structural and photoluminescent properties of TiN thin films , 2014 .

[6]  V. V. Brus,et al.  Optical constants and polarimetric properties of ТіО2–MnO2 thin films , 2012 .

[7]  R. A. Andrievski,et al.  Conductivity and the Hall coefficient of nanostructured titanium nitride films , 2004 .

[8]  V. V. Brus,et al.  On impedance spectroscopy analysis of nonideal heterojunctions , 2012 .

[9]  Oleg V. Angelsky,et al.  Singularities in vectoral fields , 1999, Correlation Optics.

[10]  Oleg V. Angelsky,et al.  The Emerging Field of Correlation Optics , 2012 .

[11]  V. Brus,et al.  The effect of interface state continuum on the impedance spectroscopy of semiconductor heterojunctions , 2013 .

[12]  A. D. Arkhelyuk,et al.  The influence of optical parameters of intermediate medium on the extinction matrix of oriented particles layer , 2006, International Conference on Correlation Optics.

[13]  V. V. Brus,et al.  Electrical and photoelectrical properties of photosensitive heterojunctions n-TiO2/p-CdTe , 2011 .

[14]  T. O. Perun,et al.  Dimensionality in optical fields and signals. , 1993, Applied optics.

[15]  V. V. Brus,et al.  Fabrication and characterization of anisotype heterojunctions n-TiN/p-CdTe , 2013 .

[16]  V. V. Brus,et al.  Kinetic properties of TiN thin films prepared by reactive magnetron sputtering , 2013 .

[17]  John L. Brebner,et al.  Characterization of reactively evaporated TiN layers for diffusion barrier applications , 1994 .

[18]  V. V. Brus,et al.  Specific features of the recombination loss of the photocurrent in n-TiN/p-Si anisotype heterojunctions , 2014 .

[19]  V. V. Brus,et al.  The effect of CoO impurity and substrate temperature on optical properties of TiO2 thin films , 2011, Other Conferences.

[20]  V. V. Khomyak,et al.  Electrical properties of anisotype heterojunctions n-CdZnO/p-CdTe , 2012 .

[21]  V. V. Brus,et al.  Electrical and photoelectric properties of anisotype n-TiN/p-Si heterojunctions , 2013 .

[22]  V. V. Brus,et al.  Temperature dependent electrical properties and barrier parameters of photosensitive heterojunctions n-TіN/p-Cd1−xZnxTe , 2015 .

[23]  Alexander G. Ushenko Laser diagnostics of biofractals , 1999 .

[24]  V. V. Brus,et al.  The effect of surface treatment on electrical and photoelectrical properies of anisotype heterojunctions n-TiN/p-Si , 2013, Correlation Optics.

[25]  Oleg V. Angelsky,et al.  Appearance of wavefront dislocations under interference among beams with simple wavefronts , 1997, Correlation Optics.

[26]  O. V. Angelsky,et al.  Scattering of inhomogeneous circularly polarized optical field and mechanical manifestation of the internal energy flows , 2012 .

[27]  K. A. Padmanabhan,et al.  Growth, surface morphology, optical properties and electrical resistivity of ɛ-TiNx (0.4 < x ≤ 0.5) films , 2008 .

[28]  V. V. Brus,et al.  Electrical properties of anisotype n-TiN/p-Hg3In2Te6 heterojunctions , 2014 .