论文信息 - Control of point defects and arsenic clusters in low-temperature grown GaAs by isovalent impurity doping - 字舞流文

Control of point defects and arsenic clusters in low-temperature grown GaAs by isovalent impurity doping

M. A. Putyato | Yu. G. Musikhin | P. Werner | N. Faleev | N. Bert | V. Chaldyshev | V. Preobrazhenskii | M. Putyato | B. Semyagin | A. E. Kunitsyn