Simultaneous Scheduling and Binding for Low Gate Leakage Nano-CMOS Datapath Circuit Behavioral Synthesis

In this paper we present two polynomial time-complexity heuristic algorithms for optimization of gate-oxide leakage (tunneling current) during behavioral synthesis through simultaneous scheduling and binding. One algorithm considers the time-constraint explicitly and the other considers it implicitly while both account for resource constraints. The algorithms selectively bind the off-critical operations to instances of the pre-characterized resources consisting of transistors of higher oxide thickness, and critical operations to the resources of lower oxide thickness for power and performance optimization. We design and characterize functional and storage units of different gateoxide thicknesses and built a datapath library. Extensive experiments for several behavioral synthesis benchmarks for 45nm CMOS technology showed that reduction as high as 85% can be obtained.

[1]  Saraju P. Mohanty,et al.  Modeling and reduction of gate leakage during behavioral synthesis of nanoCMOS circuits , 2006, 19th International Conference on VLSI Design held jointly with 5th International Conference on Embedded Systems Design (VLSID'06).

[2]  William J. Bowhill,et al.  Design of High-Performance Microprocessor Circuits , 2001 .

[3]  Niraj K. Jha,et al.  Leakage power analysis and reduction during behavioral synthesis , 2002, IEEE Trans. Very Large Scale Integr. Syst..

[4]  Jacob Gregers Hansen,et al.  Design of CMOS cell libraries for minimal leakage currents , 2004 .

[5]  R. Jacob Baker,et al.  CMOS Circuit Design, Layout, and Simulation , 1997 .

[6]  Yu Cao,et al.  New paradigm of predictive MOSFET and interconnect modeling for early circuit simulation , 2000, Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044).

[7]  Saibal Mukhopadhyay,et al.  Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits , 2003, Proc. IEEE.

[8]  Kaushik Roy,et al.  Low-power design using multiple channel lengths and oxide thicknesses , 2004, IEEE Design & Test of Computers.

[9]  Hai Zhou,et al.  Leakage power optimization with dual-V/sub th/ library in high-level synthesis , 2005, Proceedings. 42nd Design Automation Conference, 2005..

[10]  裕幸 飯田,et al.  International Technology Roadmap for Semiconductors 2003の要求清浄度について - シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について - , 2004 .

[11]  Chaitali Chakrabarti,et al.  Low-power scheduling with resources operating at multiple voltages , 2000 .

[12]  Saraju P. Mohanty,et al.  Energy-efficient datapath scheduling using multiple voltages and dynamic clocking , 2005, TODE.

[13]  S. Sapatnekar,et al.  Gate Oxide Leakage and Delay Tradeoffs for Dual Tox Circuits , 2005 .

[14]  Luca Benini,et al.  A survey of design techniques for system-level dynamic power management , 2000, IEEE Trans. Very Large Scale Integr. Syst..

[15]  J. Meindl,et al.  A circuit-level perspective of the optimum gate oxide thickness , 2001 .

[16]  David Harris,et al.  CMOS VLSI Design: A Circuits and Systems Perspective , 2004 .

[17]  Yuan Taur,et al.  CMOS design near the limit of scaling , 2002 .

[18]  Srinivas Katkoori,et al.  Knapbind: an area-efficient binding algorithm for low-leakage datapaths , 2003, Proceedings 21st International Conference on Computer Design.

[19]  Saraju P. Mohanty,et al.  A dual dielectric approach for performance aware gate tunneling reduction in combinational circuits , 2005, 2005 International Conference on Computer Design.

[20]  Dennis Sylvester,et al.  Gate oxide leakage and delay tradeoffs for dual-T/sub ox/ circuits , 2005, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

[21]  Saraju P. Mohanty,et al.  Scheduling and binding for low gate leakage nanoCMOS datapath circuit synthesis , 2006, 2006 IEEE International Symposium on Circuits and Systems.