Design and fabrication of submicrometer, single crystal Si accelerometer

A lateral accelerometer has been designed, simulated, and fabricated using a 3-mask high-aspect ratio technology. Electron beam lithography and high-density plasma etching in an inductively coupled plasma source enabled aspect ratios >30 to be achieved. This makes possible beams with very small spring constants. Combining the ability to measure very small displacement of a proof mass due to narrow capacitive gaps between comb fingers, a highly sensitive accelerometer can be obtained. The fabricated accelerometer with 1 /spl mu/m beams and 0.2 /spl mu/m comb gaps had a spring constant of 0.127 N/m, which is close to the calculated values of 0.146 N/m. Based on the capacitance measurements, the accelerometer sensitivity is calculated to be 6.3 fF/g. Reducing the beam width to 0.4 /spl mu/m lowered the spring constant to 0.03 N/m, and an improved equivalent sensitivity of 79.2 fF/g is calculated. The minimum detectable acceleration is on the order of a few microgravity over a range of hundreds of gravities.

[1]  R. Howe,et al.  Design and calibration of a microfabricated floating-element shear-stress sensor , 1988 .

[2]  F. Rudolf,et al.  Precision accelerometers with μg resolution , 1990 .

[3]  R. S. Payne,et al.  A low cost monolithic accelerometer; product/technology update , 1992, 1992 International Technical Digest on Electron Devices Meeting.

[4]  Roger T. Howe,et al.  Surface micromachined, digitally force-balanced accelerometer with integrated CMOS detection circuitry , 1992, Technical Digest IEEE Solid-State Sensor and Actuator Workshop.

[5]  T. Gabrielson Mechanical-thermal noise in micromachined acoustic and vibration sensors , 1993 .

[6]  T. Kenny,et al.  A miniature high-sensitivity broad-band accelerometer based on electron tunneling transducers , 1994 .

[7]  B. Boser,et al.  Surface micromachined accelerometers , 1995, Proceedings of the IEEE 1995 Custom Integrated Circuits Conference.

[8]  Stephen F. Bart,et al.  An Integrated Force-balanced Capacitive Accelerometer For Low-G Applications , 1995, Proceedings of the International Solid-State Sensors and Actuators Conference - TRANSDUCERS '95.

[9]  K. Najafi,et al.  A high sensitivity z-axis torsional silicon accelerometer , 1996, International Electron Devices Meeting. Technical Digest.

[10]  Lucas NovaSensor,et al.  Force-Balanced Accelerometer with mG Resolution, Fabricated using Silicon Fusion Bonding and Deep Reactive Ion Etching , 1997 .

[11]  Khalil Najafi,et al.  Micromachined tunneling accelerometer with a low-voltage CMOS interface circuit , 1997, Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97).

[12]  Thomas W. Kenny,et al.  Characterization of a high-sensitivity micromachined tunneling accelerometer with micro-g resolution , 1998 .

[13]  S. W. Pang,et al.  Dry Etching of Deep Si Trenches for Released Resonators in a Cl2 Plasma , 1998 .

[14]  Farrokh Ayazi,et al.  Micromachined inertial sensors , 1998, Proc. IEEE.

[15]  J. Weigold,et al.  Fabrication of thick Si resonators with a frontside-release etch-diffusion process , 1998 .

[16]  C. Nguyen,et al.  A merged process for thick single-crystal Si resonators and BiCMOS circuitry , 1999 .

[17]  J. Borenstein,et al.  Characterization of bending in single crystal Si beams and resonators , 1999 .