A model for stress‐induced metal notching and voiding in very large‐scale‐integrated Al–Si (1%) metallization

The kinetics of stress‐induced notching and voiding in very large‐scale‐integrated circuit Al–Si metallization have been investigated. A generalized time‐to‐failure model has been developed and an activation energy of 0.4 eV has been observed for the mechanism. The stress state of the passivation overcoat has been found to have a major impact on the notching and voiding tendency of the fine‐grain metal.