Optical testability in semiconductors with density-dependent carrier lifetimes

The performance characteristics of semiconductor optical bistable Fabry-Perot devices making use of band-gap resonant nonlinearities will be significantly altered when the excess carrier recombination is density-dependent. This paper analyses the effects of radiative and Auger recombination processes in some practical etalon configurations. Optical bistability is, in general, more difficult to achieve under these conditions but suitable cavity design can significantly reduce the minimum incident intensity required.

[1]  Hyatt M. Gibbs,et al.  Optical Bistable Devices: The Basic Components Of All-Optical Systems? , 1980 .

[2]  Alan Miller,et al.  Non-linear optical effects in InSb with a c.w. CO laser , 1978 .

[3]  S. C. Choo,et al.  Recombination Centers in InSb , 1967 .

[4]  Gisbert Staupendahl,et al.  Optical tuning of a tellurium cavity: optical modulation and bistability in the infrared region at room temperature , 1982 .

[5]  Mohammad R. Taghizadeh,et al.  Realization of an InSb bistable device as an optical and gate and its use to measure carrier recombination times , 1983 .

[6]  J. R. Hill,et al.  Non-linear refractive index changes in CdHgTe at 175 K with 10.6μm radiation , 1982 .

[7]  R. Lind,et al.  Degenerate four-wave mixing near the band gap of semiconductors (A) , 1979 .

[8]  David A. B. Miller,et al.  Optical bistability and signal amplification in a semiconductor crystal: applications of new low‐power nonlinear effects in InSb , 1979 .

[9]  D. Miller,et al.  Degenerate four‐wave mixing in room‐temperature GaAs/GaAlAs multiple quantum well structures , 1983 .

[10]  G. Parry,et al.  Non-Linear Fabry-Perot Transmission in a CdHgTe Etalon , 1984 .

[11]  D. Miller,et al.  Dynamic non-linear optical processes in semiconductors , 1981 .

[12]  Hyatt M. Gibbs,et al.  Optical bistability in semiconductors , 1979 .

[13]  D. Miller,et al.  Refractive Fabry-Perot bistability with linear absorption: Theory of operation and cavity optimization , 1981 .

[14]  A. Gossard,et al.  Saturation of the free exciton resonance in GaAs , 1979 .

[15]  B. Wherrett,et al.  Theory of nonlinear refraction near the band edge of a semiconductor , 1982, Proceedings of the Royal Society of London. A. Mathematical and Physical Sciences.

[16]  C. Pidgeon,et al.  Frequency dependence of two-photon absorption in InSb and Hg 1-x Cd x Te , 1980 .

[17]  C. T. Seaton,et al.  Band-Gap—Resonant Nonlinear Refraction in III-V Semiconductors , 1981 .

[18]  Ajoy K. Kar,et al.  Optical bistability in InSb at room temperature with two‐photon excitation , 1983 .

[19]  D. Miller,et al.  Large room‐temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structures , 1982 .

[20]  J. H. Marburger,et al.  Theory of a lossless nonlinear Fabry-Perot interferometer , 1978 .

[21]  H. Gibbs,et al.  Optical modulation by optical tuning of a cavity , 1979 .

[22]  J. S. Blakemore.  Semiconductor Statistics , 1962 .