Effect of band non-parabolicity on energy sub-band profile for nano-dimensional MOSFET
暂无分享，去创建一个
[1] Gaurav Saini,et al. Impact of Channel Engineering on Double Gate Junction Less Transistor for Improved Analog Performance , 2018, 2018 International Conference on Emerging Trends and Innovations In Engineering And Technological Research (ICETIETR).
[2] Chandan Kumar Sarkar,et al. Modeling of characteristic parameters for nano-scale junctionless double gate MOSFET considering quantum mechanical effect , 2015 .
[3] Sung-Jin Choi,et al. Simple Analytical Bulk Current Model for Long-Channel Double-Gate Junctionless Transistors , 2011, IEEE Electron Device Letters.
[4] B. McCarthy,et al. SOI gated resistor: CMOS without junctions , 2009, 2009 IEEE International SOI Conference.
[5] Mark S. Lundstrom,et al. Simulations of nanowire transistors: atomistic vs. effective mass models , 2007, 0801.0123.
[6] S. Baishya,et al. A subthreshold surface potential model for short-channel MOSFET taking into account the varying depth of channel depletion layer due to source and drain junctions , 2006, IEEE Transactions on Electron Devices.
[7] Mark S. Lundstrom,et al. Nanoscale Transistors: Device Physics, Modeling and Simulation , 2005 .
[8] Stephanie Thalberg,et al. Fundamentals Of Modern Vlsi Devices , 2016 .