Investigation of enhancement-mode AlGaN/GaN nanowire channel high-electron-mobility transistor with oxygen-containing plasma treatment
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Y. Hao | Xiao-hua Ma | Chong Wang | Minhan Mi | Xuefeng Zheng | Peng Zhang | Xiaoling Duan | Ling Yang | Q. Zhu | Meng Zhang | Yunlong He | Hengshuang Zhang | Ji Wu