Compact hybrid Si microring lasers

In this paper we review the recent progress in developing compact microring lasers on the hybrid silicon platform. A simplified self-aligned process is used to fabricate devices as small as 15 μm in diameter. The optically-pumped, continuous wave (cw) devices show low threshold carrier density, comparable to the carrier density to reach material transparency. In the electrically-pumped lasers, the short cavity length leads to the minimum laser threshold less than 5 mA in cw operation. The maximum cw lasing temperature is up to 65 °C. Detailed studies in threshold as a function of coupling coefficient and bus waveguide width are presented. Surface recombination at the dry-etched exposed interface is investigated qualitatively by studying the current-voltage characteristics. Ring resonator-based figures of merits including good spectral purity and large side-mode suppression ratio are demonstrated. Thermal impedance data is extracted from temperature-dependent spectral measurement, and buried oxide layer in silicon-on-insulator wafer is identified as the major thermal barrier to cause high thermal impedance for small-size devices. The demonstrated compact hybrid ring lasers have low power consumption, small footprint and dynamic performance. They are promising for Si-based optical interconnects and flip-flop applications.

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