Inductively coupled plasma-induced etch damage of GaN p-n junctions

Plasma-induced etch damage can degrade the electrical and optical performance of III-V nitride electronic and photonic devices. We have investigated the etch-induced damage of an Inductively Coupled Plasma (ICP) etch system on the electrical performance of mesa-isolated GaN pn-junction diodes. GaN p-i-n mesa diodes were formed by Cl{sub 2}/BCl{sub 3}/Ar ICP etching under different plasma conditions. The reverse leakage current in the mesa diodes showed a strong relationship to chamber pressure, ion energy, and plasma flux. Plasma induced damage was minimized at moderate flux conditions ({le} 500 W), pressures {ge}2 mTorr, and at ion energies below approximately -275 V.

[1]  R. F. Davis,et al.  Highly anisotropic, ultra-smooth patterning of GaN/SiC by low energy electron enhanced etching in DC plasma , 1997 .

[2]  Yoon-Kyu Song,et al.  AlGaN/GaN quantum well ultraviolet light emitting diodes , 1998 .

[3]  K. Martin,et al.  Low energy electron‐enhanced etching of GaAs(100) in a chlorine/hydrogen dc plasma , 1996 .

[4]  S. Pearton.  Characterization of damage in electron cyclotron resonance plasma etched compound semiconductors , 1997 .

[5]  Hadis Morkoç,et al.  Reactive ion etching of GaN using BCl3 , 1994 .

[6]  J. Etrillard,et al.  Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4 , 1997 .

[7]  Robert F. Davis,et al.  High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma , 1997 .

[8]  Peter P. Chow,et al.  Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy , 1997 .

[9]  F. Ren,et al.  Electrical effects of plasma damage in p-GaN , 1999 .

[10]  Michael R. Melloch,et al.  Surface and perimeter recombination in GaAs diodes: an experimental and theoretical investigation , 1991 .

[11]  C. G. Willison,et al.  GaN Etching in BCl 3 /Cl 2 Plasmas , 1998 .

[12]  R. J. Shul,et al.  Depth and thermal stability of dry etch damage in GaN Schottky diodes , 1999 .

[13]  K. Martin,et al.  The dry etching of group III-nitride wide-bandgap semiconductors , 1996 .

[14]  S. Pang.  Surface Damage on GaAs Induced by Reactive Ion Etching and Sputter Etching , 1986 .

[15]  Holly A. Marsh,et al.  Back-illuminated GaN/AlGaN heterojunction photodiodes with high quantum efficiency and low noise , 1998 .

[16]  Henryk Temkin,et al.  Low noise p-π-n GaN ultraviolet photodetectors , 1997 .

[17]  Albert G. Baca,et al.  Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor , 1999 .

[18]  G. Chi,et al.  Electrical and optical changes in the near surface of reactively ion etched n-GaN , 1999 .

[19]  S. Nakamura,et al.  InGaN multiquantum-well-structure laser diodes with GaN-AlGaN modulation-doped strained-layer superlattices , 1998 .

[20]  F. Ren,et al.  300°C GaN/AlGaN Heterojunction Bipolar Transistor , 1998 .

[21]  M. Khan,et al.  Reactive ion etching of gallium nitride using hydrogen bromide plasmas , 1994 .

[22]  M. Khan,et al.  Characterization of reactive ion etching-induced damage to n-GaN surfaces using schottky diodes , 1997 .

[23]  M. Khan,et al.  The effects of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-Type GaN , 1998 .

[24]  C. Eddy,et al.  Plasma etch-induced conduction changes in gallium nitride , 1999 .

[25]  M. L. Lovejoy,et al.  Plasma‐induced damage of GaAs pn‐junction diodes using electron cyclotron resonance generated Cl2/Ar, BCl3/Ar, Cl2/BCl3/Ar, and SiCl4/Ar plasmas , 1995 .

[26]  Robert F. Karlicek,et al.  Inductively coupled plasma etching of GaN , 1996 .

[27]  C. Vieu,et al.  Sidewall and surface induced damage comparison between reactive ion etching and inductive plasma etching of InP using a CH4/H2/O2 gas mixture , 1996 .