Temperature Dependent Properties of Different Lifetime Killing Technologies on Example of Fast Power Diodes

Lifetime-controlled devices show different temperature behavior depending on the properties of induced recombination centers. The different recombination centers (Au-, Pt-doping, Electron and combined Electron and Helium irradiation) are compared for their influence on power device properties. DLTS and lifetime measurements of recombination center parameters over a wide temperature range explain the influence of lifetime killing on device behavior which is shown on the example of the measured temperature dependencies of the most important properties of fast freewheeling diodes.

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