An Investigation on Border Traps in III–V MOSFETs With an In0.53Ga0.47As Channel
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N. Collaert | D. Linten | B. Kaczer | G. Groeseneken | Z. Ji | M. Duan | J. Zhang | J. Franco | A. Alian | S. De Gendt | W. Zhang | Xiong Zhang | R. Gao | D. Zhou