Single-chip condenser microphone using porous silicon as sacrificial layer for the air gap

Abstract A single-chip IC-compatible silicon condenser microphone with a highly sensitive silicon nitride diaphragm and a rigid monocrystalline silicon counterelectrode with acoustic holes was designed and built. Porous silicon with its high dissolution rate in 1% KOH was used as an auxiliary sacrificial layer in combination with sputtered SiO 2 to define the air gap. This results in low parasitic capacitances and a microphone structure where the diaphragm is coplanar with its suspensions. The rigid backelectrode is undistorted, the diaphragm under low tensile stress, a prerequisite for high sensitivity. Microphones of different dimensions of round and square electrodes with single diaphragms and diaphragm arrays were built and packaged in round chip carriers. The open loop sensitivity is in the mV/Pa range depending on the type of microphone. The frequency response goes beyond 25 kHz for an air gap of 1.3 μm.

[1]  A Stoffel,et al.  Fabrication of single-chip polysilicon condenser structures for microphone applications , 1995 .

[2]  Wouter Olthuis,et al.  A review of silicon microphones , 1994 .

[3]  F. Parodi,et al.  A silicon condenser microphone with a highly perforated backplate , 1991, TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers.

[4]  H. Baltes,et al.  Photolithography in anisotropically etched grooves , 1996, Proceedings of Ninth International Workshop on Micro Electromechanical Systems.

[5]  Wouter Olthuis,et al.  Fabrication of a subminiature silicon condenser microphone using the sacrificial layer technique , 1991, TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers.

[6]  J. Bergqvist,et al.  A new condenser microphone in silicon , 1990 .