TSV RF de-embedding method and modeling for 3DIC

TSV (Thru-Silicon-Via) for 3D packaging technique is a further passive component, for connecting two dies by stacking. RF characteristics of TSV with modeling up to 50GHz are presented in this paper, where a L-2L de-embedding method (double delay) is in use, which is the first applied for TSV on-wafer measurement. Furthermore, a new T-model is proposed for modeling a single TSV of 28nm CMOS process.

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