论文信息 - Ion-assisted Sputter Deposition of Microcrystalline Silicon Films with Pulsed-DC Plasma Excitation - 字舞流文

Ion-assisted Sputter Deposition of Microcrystalline Silicon Films with Pulsed-DC Plasma Excitation

W. Fuhs | P. Reinig | F. Fenske | B. Selle

[1] J. Schneider,et al. Ionized sputter deposition using an extremely high plasma density pulsed magnetron discharge , 2000 .

[2] I. Katardjiev,et al. Frequency response in pulsed DC reactive sputtering processes , 2000 .

[3] Chu,et al. Ion-energy effects in silicon ion-beam epitaxy. , 1996, Physical review. B, Condensed matter.

[4] J. Abelson,et al. Growth of polycrystalline silicon at 470 °C by magnetron sputtering onto a sputtered μc‐hydrogenated silicon seed layer , 1995 .

[5] S. Tohno,et al. ION BEAM EPITAXY OF SILICON FILMS IN AN ULTRAHIGH VACUUM USING A SPUTTERING-TYPE METAL ION SOURCE , 1995 .

[6] Atwater,et al. Crystal-state-amorphous-state transition in low-temperature silicon homoepitaxy. , 1994, Physical review. B, Condensed matter.

[7] J. Poate,et al. DENSITY OF AMORPHOUS SI , 1994 .

[8] Klaus Goedicke,et al. Pulsed magnetron sputter technology , 1993 .

[9] T. Shibata,et al. Study on further reducing the epitaxial silicon temperature down to 250 °C in low‐energy bias sputtering , 1991 .

[10] G. L. Harding,et al. Ion‐assisting magnetron sources: Principles and uses , 1990 .

[11] William Paul,et al. Optical constants of rf sputtered hydrogenated amorphous Si , 1979 .