论文信息 - Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density - 字舞流文

Pendeo-epitaxy of GaN on SOI nano-pillars: Freestanding and relaxed GaN platelets on silicon with a reduced dislocation density

M. Portail | B. Damilano | V. Brändli | P. de Mierry | G. Feuillet | B. Alloing | P. Gergaud | C. Gourgon | N. Bernier | Maximilien Cottat | Jesús Zúñiga Pérez | R. Dagher | N. Mante | J. Z. Pérez