A New Technique of Boron Doping in Si:H Films

Very high doping efficiency of boron atoms in hydrogenated silicon has been achieved using the glow discharge of a SiH4-B2H6 mixture gas under conditions of a low concentration of SiH4 and application of magnetic field to the plasma column. A maximum conductivity of 7.8 Ω-1cm-1 has been obtained at a doping ratio of NB2H6 /NSiH4 =2.6%. This high conductivity is found to be related to partial crystallization of amorphous Si:H network.