论文信息 - Application of a CMP Model to Tungsten CMP

Application of a CMP Model to Tungsten CMP

A general model of chemical mechanical polishing (CMP) has been derived which shows the dependence of the polishing rate on the concentration of chemicals and abrasives in the slurry. This paper applies the model to tungsten CMP and describes the chemistry of tungsten CMP in some detail.

E. Paul | Ed Paul

[1] David J. Stein,et al. Investigation of the Kinetics of Tungsten Chemical Mechanical Polishing in Potassium Iodate‐Based Slurries: I. Role of Alumina and Potassium lodate , 1999 .

[2] Uday Mahajan,et al. Effect of Particle Size during Tungsten Chemical Mechanical Polishing , 1999 .

[3] S. Raghavan,et al. Electrochemistry of Chemical Vapor Deposited Tungsten Films with Relevance to Chemical Mechanical Polishing , 1996 .

[4] D. Macdonald,et al. On the Kinetics of Growth of Anodic Oxide Films , 1998 .

[5] Robert D. Tolles,et al. Consumables for the Chemical Mechanical Polishing (Cmp) of Dielectrics and Conductors , 1994 .

[6] P. Vennereau,et al. Comparaison des cinetiques de formation de la couche passivante de WO3 sur des electrodes monocristallines de tungstene orientees (100) et (110) en milieu H2SO4 1 M , 1978 .

[7] E. Paul,et al. A Model of Chemical Mechanical Polishing , 2001 .

[8] S. Raghavan,et al. Electrochemical Measurements during the Chemical Mechanical Polishing of Tungsten Thin Films , 1997 .