Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors

We proposed a homojunctioned amorphous InGaZnO (a-IGZO) thin film transistor (TFT) and compared its performance to that of a conventional structured TFT. The source/drain regions were formed in the a-IGZO channel layer using Ar and H2 plasma treatments, respectively. Hydrogen itself was found to act as a carrier of donors with H2 plasma treatment, which had effects to a depth of 50 nm. Our TFT had a field-effect mobility of 7.27 cm2/V s, an on/off ratio of 1.2×107, a threshold voltage of 0.96 V, and a subthreshold swing of 0.49 V/decade.

[1]  D. Hwang,et al.  Current-driven hydrogen incorporation in zinc oxide , 2007 .

[2]  David C. Look,et al.  Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO , 2003 .

[3]  Yeon-Gon Mo,et al.  Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment , 2007 .

[4]  H. Ohta,et al.  Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor , 2003, Science.

[5]  Kyoung-Kok Kim,et al.  Low-resistance and nonalloyed ohmic contacts to plasma treated ZnO , 2001 .

[6]  Dieter K. Schroder,et al.  Semiconductor Material and Device Characterization: Schroder/Semiconductor Material and Device Characterization, Third Edition , 2005 .

[7]  Yeon-Gon Mo,et al.  High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel , 2007 .

[8]  T. Kamiya,et al.  High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering , 2006 .

[9]  Yu-Lin Wang,et al.  Stable room temperature deposited amorphous InGaZnO4 thin film transistors , 2008 .

[10]  Hideo Hosono,et al.  Specific contact resistances between amorphous oxide semiconductor In Ga Zn O and metallic electrodes , 2008 .

[11]  V. Walle,et al.  Hydrogen as a cause of doping in zinc oxide , 2000 .

[12]  Hyun-Joong Chung,et al.  Bulk-Limited Current Conduction in Amorphous InGaZnO Thin Films , 2008 .

[13]  Kee-Won Kwon,et al.  Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors , 2008 .

[14]  D. Schroder.  Semiconductor Material and Device Characterization , 1990 .