Low EMI Techniques for New Generation IGBTModules

Fuji Electric’s 6th generation IGBT modules have drastically improved the trade-off of radiated EMI noise and power dissipation loss. By applying new packaging technology, a reduction in radiated noise of about -5dB by reducing the noise loop area has been achieved. Additionally, new trench gate IGBTs reduce the radiated noise without significantly increasing switching losses. As a result, the total radiated noise is reduced by -15dB with the same dissipation losses compared to the conventional IGBT module. S. Igarashi, H. Takubo, Y. Kobayashi, M. Otsuki, T. Miyasaka and T. Heinzel, Fuji Electric Device Technology Japan and Offenbach/Germany

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