论文信息 - A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs

A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs

The single-event-gate-rupture cross-section is measured as a function of drain-source and gate-source bias for some n-channel power MOSFETs. The experimental techniques are explained, and the results are interpreted with the help of two-dimensional computer modeling.

[1] K. A. LaBel,et al. Experimental evidence of the temperature and angular dependence in SEGR [power MOSFET] , 1996 .

[2] M.-C. Calvet,et al. Measurement of a cross-section for single-event gate rupture in power MOSFETs , 1996, IEEE Electron Device Letters.

[3] C. F. Wheatley,et al. Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs , 1996 .

[4] Kenneth F. Galloway,et al. Simulating single-event burnout of n-channel power MOSFET's , 1993 .

[5] J. Gasiot,et al. Evidence of the ion's impact position effect on SEB in N-channel power MOSFETs , 1994 .

[6] Kenneth F. Galloway,et al. Temperature dependence of single-event burnout in n-channel power MOSFETs (for space application) , 1992 .

[7] Kenneth F. Galloway,et al. A conceptual model of a single-event gate-rupture in power MOSFETs , 1993 .

[8] C. F. Wheatley,et al. Single-event gate rupture in vertical power MOSFETs; an original empirical expression , 1994 .

[9] Kenneth F. Galloway,et al. Evaluation of SEGR threshold in power MOSFETs , 1994 .

[10] Ronald D. Schrimpf,et al. A review of the techniques used for modeling single-event effects in power MOSFETs , 1996 .

[11] J. R. Brews,et al. (Single-Event Gate-Rupture in Power MOSFETs: Prediction of Breakdown Biases and Evaluation of Oxide , 1995 .

[12] J. C. Pickel,et al. Rate prediction for single event effects-a critique , 1992 .