论文信息 - Formation of implanted piezoresistors under 100-nm thick for nanoelectromechanical systems

Formation of implanted piezoresistors under 100-nm thick for nanoelectromechanical systems

Piezoresistors, with a thickness of 90 nm have been obtained by implanting boron fluorine into germanium-preamorphized silicon. Germanium implantation was carried out at a dose of 10/sup 15/ cm/sup -2/ and an energy of 60 keV to form a 80-nm-thick preamorphized layer prior to BF/sub 2/ implantation at a dose of 5 /spl times/ 10/sup 14/ cm/sup -2/ and an energy of 15 keV. The experimental sensitivity is 80% of the theoretical maximum. This shows that the germanium preamorphization step does not impact the sensitivity of the piezoresistors. Moreover, 1/f noise characteristics have been improved compared to those obtained in a previous work without using a preamorphizing implant.

R. Plana | L. Bary | B. Belier | C. Bergaud | E. Cocheteau

[1] Liviu Nicu,et al. A metallic microcantilever electric contact probe array incorporated in an atomic force microscope , 2000 .

[2] Robert Plana,et al. Formation of ultra-shallow p + /n junctions using BF 2 implantation for the fabrication of improved piezoresistive cantilevers , 2001 .

[3] S. Mehta,et al. Effect of Ge Pre-amorphization on Junction Characteristics for Low Energy B Implants , 2000 .

[4] A. Boisen,et al. Cantilever-based bio-chemical sensor integrated in a microliquid handling system , 2001, Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090).

[5] A. See,et al. Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths , 2000 .

[6] T. Kenny,et al. High-sensitivity piezoresistive cantilevers under 1000 Å thick , 1999 .

[7] T. Kenny,et al. 1/f noise considerations for the design and process optimization of piezoresistive cantilevers , 2000, Journal of Microelectromechanical Systems.

[8] Robert Barrett,et al. Atomic force microscopy using a piezoresistive cantilever , 1991, TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers.

[9] P. Griffin,et al. Influence of dislocation loops created by amorphizing implants on point defect and boron diffusion in silicon , 1996 .